ISU Electrical and Computer Engineering Archives

Nonlinear device characterization and second harmonic impedance tuning to achieve peak performance for a SiC power MESFET device at 2GHz

sekar, saalini (2008) Nonlinear device characterization and second harmonic impedance tuning to achieve peak performance for a SiC power MESFET device at 2GHz. Masters thesis, Iowa State University.

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Abstract

This thesis presents a way to make nonlinear device measurements for a power MESFET device using the load pull system. The device was characterized at the fundamental and second harmonic frequencies during large signal operation. The data thus collected was used in designing the input and output impedance matching networks that would optimize the performance of the device. A power MESFET device like the one used to conduct this experiment is mainly used in designing power amplifiers for communication systems including the transmitters used in satellites. Therefore efficiency of the part is of the utmost importance. By characterizing the device and utilizing matching impedance networks on the input and the output of the device, the efficiency of the device can be greatly improved. The characterization of the device, the construction of the matching networks, simulation and test results for the output power are all presented in this thesis.

EPrint Type:Thesis (Masters)
Subjects:Electrical Engineering > MICROELECTRONICS & PHOTONICS > Device Modeling and Physics
ID Code:426
Identification Number:Identification Number UNSPECIFIED
Deposited By:saalini sekar
Deposited On:21 May 2008

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