Electron Cyclotron Resonance (ECR) Plasma Enhanced Oxidation of Silicon
Jaju, Vishwas (2007) Electron Cyclotron Resonance (ECR) Plasma Enhanced Oxidation of Silicon. Masters thesis, Iowa State University.
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In this work we present the channel degradation properties of MOSFET with gate oxide grown using electron cyclotron resonance (ECR) plasma. Si was oxidized using ECR plasma of 10% O2/He at 450 degree C for 60 min. MOS and MOSFETs devices were fabricated, using ECR grown oxide as a gate oxide, to evaluate the electrical properties. We found that the n-MOSFET with ECR as-grown oxide shows poorer channel degradation properties, by approximately two orders of magnitude, compared to channel with thermally grown (at 950 degree C) dry oxide. When as-grown oxide was annealed at much higher temperature (~800 degree C), channel resistance for the hot carriers improved and became comparable to that of the thermally grown oxide. We have shown that because of the lower processing temperatures used during oxidation strain is present in the bulk oxide and also at Si-SiO2 interface. Annealing at higher temperature can relieve strain and this assumption was found be self consistent with the infrared absorption study.
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