ISU Electrical and Computer Engineering Archives

Low pressure chemical vapor deposition of a-Si:H from disilane

Petersburg, Cole F (2007) Low pressure chemical vapor deposition of a-Si:H from disilane. Masters thesis, Iowa State University.

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Abstract

Chemical vapor deposition of thin films of hydrogenated amorphous silicon from disilane gas was studied. Disilane diluted in hydrogen, pure disilane, and diluted diborane were used as precursors. Hot-wall and cold-wall deposition was used at temperatures between 440 and 550C. Deposition pressures ranged between 0.2 Torr and 12 Torr. Extreme deposition rates were achieved at high temperatures without dust formation, while high deposition rates were achieved at the lowest temperatures. Arrhenius parameters and power-law pressure dependences of the growth rates were calculated. Optical and electronic properties relevant to photovoltaic energy conversion were measured. Raman spectroscopy indicated purely amorphous microstructures, and infrared spectroscopy indicated good hydrogen content and a lack of dihydride bonding.

EPrint Type:Thesis (Masters)
Uncontrolled Keywords:cvd, lpcvd, disilane, amorphous silicon, chemical vapor deposition
Subjects:Electrical Engineering > MICROELECTRONICS & PHOTONICS > Solar Energy Conversion Materials and Devices
Electrical Engineering > MICROELECTRONICS & PHOTONICS > Semiconductor Materials & Devices Processing
ID Code:314
Identification Number:Identification Number UNSPECIFIED
Deposited By:Cole Petersburg
Deposited On:30 August 2007

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