Low pressure chemical vapor deposition of a-Si:H from disilane
Petersburg, Cole F (2007) Low pressure chemical vapor deposition of a-Si:H from disilane. Masters thesis, Iowa State University.
Full text available as:
Chemical vapor deposition of thin films of hydrogenated amorphous silicon from disilane gas was studied. Disilane diluted in hydrogen, pure disilane, and diluted diborane were used as precursors. Hot-wall and cold-wall deposition was used at temperatures between 440 and 550C. Deposition pressures ranged between 0.2 Torr and 12 Torr. Extreme deposition rates were achieved at high temperatures without dust formation, while high deposition rates were achieved at the lowest temperatures. Arrhenius parameters and power-law pressure dependences of the growth rates were calculated. Optical and electronic properties relevant to photovoltaic energy conversion were measured. Raman spectroscopy indicated purely amorphous microstructures, and infrared spectroscopy indicated good hydrogen content and a lack of dihydride bonding.
Archive Staff Only: edit this record